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DS1556P SVC347 1210M 1590Z119 0A60T L188E 2SB12 P100A
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  Datasheet File OCR Text:
 40 10V 4V 30 4.5V
30 25 20 Vds=5V 125C
Id (A)
20 3.5V 10
Id (A)
15 10 25C 5
Vgs=3V 0 0 1 2 3 4 5 Vds (Volts) Fig 1: On-Region Characteristics 0 1.5 2 2.5 3 3.5 4 Vgs (Volts) Figure 2: Transfer Characteristics 2.2
24
Normalized On-Resistance
2 1.8 1.6 1.4 1.2 1 0.8
Vgs=10V Id=6.3A
22
Rds(on) (m:)
Vgs=4.5V 20 Vgs=10V 18
Vgs=4.5V Id=5.7A
16 0 5 10 15 20 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
0
25
50
75
100
125
150
175
Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
50 Id=6.3A 40 125C
1.0E+01 1.0E+00 1.0E-01 125C
Rds(on) (m:)
Is (A)
30 25C 20
1.0E-02 25C 1.0E-03 1.0E-04
10 2 4 6 8 10 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 Vsd (Volts) Figure 6: Body-Diode Characteristics
10 8 Vds=15V Id=6.3A
3500 3000
Capacitance (pF)
2500 2000 1500 Coss 1000 Crss 500
Ciss
Vgs (Volts)
6 4 2 0 0 10 20 30 40 50 Qg (nC) Figure 7: Gate-Charge Characteristics
0 0 5 10 15 20 25 30 Vds (Volts) Figure 8: Capacitance Characteristics
100.0 Rds(on) limited 10.0 100Ps 1ms 10ms 1s 1.0 Tj(max)=150C Ta=25C 0.1 0.1 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10s DC 0.1s 10Ps
40 Tj(max)=150C Ta=25C 30
Power (W)
Id (Amps)
20
10
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10
ZTja Normalized Transient Thermal Resistance
D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=62.5C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
Pd Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance


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